MMR TECHNOLOGY HK LIMITED

MMR TECHNOLOGY HK LIMITED

Manufacturer from China
Active Member
3 Years
Home / Products / Insulated Gate Bipolar Transistor /

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

Contact Now
MMR TECHNOLOGY HK LIMITED
Country/Region:china
Contact Now

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

Ask Latest Price
Video Channel
Brand Name :MITSUBISHI
price :Competitive
Model Number :CM600YE2N-12F
Payment Terms :T/T
MITSUBISHI CM600YE2N-12F :1200 V
Collector Current (Ic) :600 A
Datasheet :2400 W
Operating Temperature (Top) :-40°C to +150°C
Storage Temperature (Tstg) :-40°C to +125°C
Dimensions (W x D x H) :100mm x 140mm x 30mm
Weight :1.1kg
more
Contact Now

Add to Cart

View Product Description

Product Description:

MITSUBISHI CM600YE2N-12F power transistor module. This high-performance module is designed to deliver exceptional power handling capabilities for various applications. With a collector-emitter voltage (Vces) of 1200V and a collector current (Ic) rating of 600A, it provides reliable and efficient power control.

The CM600YE2N-12F module boasts a maximum power dissipation (Pc) of 2400W, allowing it to handle demanding power requirements with ease. It operates within a wide temperature range of -40°C to +150°C, ensuring reliable performance even in extreme environments. The module's storage temperature (Tstg) range is -40°C to +125°C, providing flexibility for storage and transportation.

With its compact dimensions of 100mm x 140mm x 30mm and a weight of 1.1kg, the CM600YE2N-12F module offers easy integration into various systems and applications.

MITSUBISHI CM600YE2N-12F power transistor module is a reliable choice that delivers exceptional performance and durability.

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

Inquiry Cart 0
You May Like
FUJI 2MBI600VN-170P-50 IGBT Module 1700V 600A
FUJI 2MBI600VN-170P-50 IGBT Module 1700V 600A
MITSUBISHI PM50RL1C060 IGBT Modules IPM MODULE L1-SERIES 7-PAC 50A 600V
MITSUBISHI PM50RL1C060 IGBT Modules IPM MODULE L1-SERIES 7-PAC 50A 600V
MITSUBISHI CM300DY-24H IGBT Module 1200V 300A 2100W
MITSUBISHI CM300DY-24H IGBT Module 1200V 300A 2100W
SIEMENS A5E01187909 TCB IGBT MODULE 400V-690V
SIEMENS A5E01187909 TCB IGBT MODULE 400V-690V
FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack
FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack
Electronics Transistor IGBT General Purpose
Electronics Transistor IGBT General Purpose
Bipolar IGBT Power Transistor Through Hole
Bipolar IGBT Power Transistor Through Hole
Discrete Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ABB IGBT Module
Discrete Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ABB IGBT Module
INFINEON FS30R06W1E3 IGBT MODULE 600V 60A 150W Power Block Module
INFINEON FS30R06W1E3 IGBT MODULE 600V 60A 150W Power Block Module
ABB 5SNA1200E330100 IGBT Module 3300V 1200A
ABB 5SNA1200E330100 IGBT Module 3300V 1200A
Infineon FF300R12KE4 FF300R12KE4_E IGBT Module 1.95 kW 1.2 kV 370 A
Infineon FF300R12KE4 FF300R12KE4_E IGBT Module 1.95 kW 1.2 kV 370 A
MITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960W
MITSUBISHI CM150DY-24A IGBT MODULE 1.2kV 150A 960W
Implement Insulated Gate Bipolar Transistors Electrode Automotive IGBT Modules
Implement Insulated Gate Bipolar Transistors Electrode Automotive IGBT Modules
MMR Insulated Gate Bipolar Transistor Diode Modules IGBT 400a 600v 1200v
MMR Insulated Gate Bipolar Transistor Diode Modules IGBT 400a 600v 1200v
Insulated Gate Transistor Bipolar IGBT With Ultrafast Soft Recovery Diode
Insulated Gate Transistor Bipolar IGBT With Ultrafast Soft Recovery Diode
Send your message to this supplier
*From:
*To:

MMR TECHNOLOGY HK LIMITED

*Subject:
*Message:
Characters Remaining : (0/3000)
Contact Now